unisonic technologies co., ltd UTT36N05 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-654.a 36a, 50v n-channel enhancement mode power mosfet transistor ? description the utc UTT36N05 is an n-channel enhancement power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high current capacity and low gate charge. the utc UTT36N05 is suitable for motor control, ac-dc or dc-dc converters and audio amplifiers, etc. ? features * r ds(on) =33m ? @ v gs =5v,i d =18a * high switching speed * high current capacity * low gate charge(typical 35nc) ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UTT36N05l-ta3-t UTT36N05g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
UTT36N05 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-654.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (v gs =0) v dss 50 v drain-gate voltage (r gs =20k ? ) v dgr 50 v gate-source voltage v gss 15 v t c =25c 36 a continuous t c =100c i d 25 a drain current pulsed (note 2) i dm 144 a single pulsed e as 240 mj avalanche energy repetitive e ar 60 mj power dissipation (t c =25c) p d 100 w junction temperature t j 150 c storage temperature t stg -65~175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by safe operating area ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1.25 c/w
UTT36N05 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-654.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 50 v v ds =max rating, v gs =0v 1 drain-source leakage current i dss v ds = max 0.8,t c =125c,v gs =0v 10 a forward v gs =+15v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-15v, v ds =0v -100 na on characteristics (note 1) gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 1.6 2.5 v static drain-source on-state resistance r ds(on) v gs =5v, i d =18a 0.033 0.04 ? on state drain current i d(on) v ds >i d(on) r ds(on) max, v gs =10v 36 a dynamic parameters input capacitance c iss 1350 1800 pf output capacitance c oss 450 600 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 130 200 pf switching parameters total gate charge q g 35 50 nc gate to source charge q gs 11 nc gate to drain charge q gd v gs =5v, v ds =40v, i d =36a 19 nc turn-on delay time t d(on) 90 130 ns rise time t r v dd =25v, i d =18a, r g =50 ? , v gs =5v 550 800 ns off-voltage rise time t r(voff) 110 160 ns fall-time t f 180 260 ns cross-over time t c v dd =40v, i d =36a, r g =50 ? , v gs =5v 310 450 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 36 a maximum body-diode pulsed current i sm (note 2) 144 a drain-source diode forward voltage v sd i sd =36a, v gs =0v (note 1) 1.6 v body diode reverse recovery time t rr 100 ns body diode reverse recovery charge q rr 0.27 c body diode reverse recovery current i rrm i sd =36a, v dd =30v, di/dt=100a/s, t j = 150c 5.5 a notes: 1. pulsed: pulse duration = 300 ms, duty cycle 1.5% 2. pulse width limited by safe operating area
UTT36N05 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-654.a ? test circuits and waveforms gate charge test circuit gate charge waveforms v gs dut r g v ds r d v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off resistive switching test circuit resistive switching waveforms unclamped inductive switching test circuit unclamped inductive switching waveforms
UTT36N05 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-654.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
UTT36N05 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-654.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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